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Method of manufacturing a semiconductor device having redistribution layer including a dielectric layer made from a low-temperature cure polyimide

專利號
US11177165B2
公開日期
2021-11-16
申請人
Taiwan Semiconductor Manufacturing Company, Ltd.（TW Hsin-Chu）
發(fā)明人
Zi-Jheng Liu; Yu-Hsiang Hu; Hung-Jui Kuo
IPC分類
H01L21/768; H01L21/56; H01L23/498; H01L23/525; H01L23/532; H01L23/538; H01L23/31
技術(shù)領(lǐng)域
layer,may,in,be,ghi,polyimide,first,vias,thk,as
地域： Hsinchu

摘要

A method of manufacturing a semiconductor device includes the step of positioning a patterned mask over a dielectric layer. The dielectric layer comprises a low-temperature cure polyimide. The method further includes the steps of exposing a first surface of the dielectric layer through the patterned mask to an I-line wavelength within an I-line stepper, and developing the dielectric layer to form an opening.

說明書

Once cured and dried, the second redistribution passivation layer 507 may be patterned in order to form openings 523, which are filled with conductive materials that form the second redistribution passivation layer 507, to first redistribution layer 505. In an embodiment the patterning may be initiated by placing the package for which the second redistribution passivation layer 507 has been formed over into an optical lithography system for exposure.

Referring to FIG. 6, an optical lithography system 601 is presented. The optical lithography system 601 may include a light source 603, a light 605, a condense lens 607, a photomask 609, a mask stage 611, a projection lens 613, a package stage 619, a package 617 (schematically representing the components, such as the carrier substrate 101, the first and second semiconductor devices 201 and 301, the encapsulant 401, etc. that the second redistribution passivation layer 507 is formed over, as illustrated in FIGS. 5A and 5B), and a passivation layer 615 referred to henceforth as the second redistribution passivation layer 507. However, other configurations and inclusion or omission of the system 601 may be possible.

權(quán)利要求

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