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Method of manufacturing a semiconductor device having redistribution layer including a dielectric layer made from a low-temperature cure polyimide

專利號
US11177165B2
公開日期
2021-11-16
申請人
Taiwan Semiconductor Manufacturing Company, Ltd.（TW Hsin-Chu）
發(fā)明人
Zi-Jheng Liu; Yu-Hsiang Hu; Hung-Jui Kuo
IPC分類
H01L21/768; H01L21/56; H01L23/498; H01L23/525; H01L23/532; H01L23/538; H01L23/31
技術(shù)領(lǐng)域
layer,may,in,be,ghi,polyimide,first,vias,thk,as
地域： Hsinchu

摘要

A method of manufacturing a semiconductor device includes the step of positioning a patterned mask over a dielectric layer. The dielectric layer comprises a low-temperature cure polyimide. The method further includes the steps of exposing a first surface of the dielectric layer through the patterned mask to an I-line wavelength within an I-line stepper, and developing the dielectric layer to form an opening.

說明書

FIG. 8B illustrates a graphical representation of film loss of a passivation layer relative to development time in accordance with some embodiments.

FIGS. 9A-9B illustrate experimental data comparing the mean target thickness (THK) for passivation layers exposed to GHI-line versus I-line wavelengths during various steps in a patterning process in accordance with some embodiments.

FIG. 10 illustrates experimental data comparing the after etch inspection and after development inspection critical dimensions versus mask critical dimensions for passivation layers exposed to GHI-line versus I-line wavelengths during a patterning process in accordance with some embodiments.

FIG. 11 illustrates an exposure of the vias in accordance with some embodiments.

FIG. 12 illustrates a bonding of a package in accordance with some embodiments.

DETAILED DESCRIPTION

權(quán)利要求

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