Method of manufacturing a semiconductor device having redistribution layer including a dielectric layer made from a low-temperature cure polyimide
摘要
說明書
The projection lens 613 includes a magnification lens for reducing the pattern image provided by the photomask 609 and guides the patterned light to the second redistribution passivation layer 507, deposited on the substrate 617 that has been secured by the substrate stage 619. In an illustrative embodiment, the projection lens 613 has a low numerical aperture between about 0.1 and about 0.18, such as 0.16 (in contrast to a high numerical aperture in the range of 0.4 to 0.9).
The substrate stage 619 provides accurate position and movement of the substrate 617 in X, Y, and Z directions during alignment, focus, leveling and exposure operations in the optical lithography system 601 so that the image of the photomask 609 is transferred onto the second redistribution passivation layer 507, in a repetitive fashion (though other lithography methods are possible). The optical lithography system 601, or portions thereof, may include additional items, such as a vacuum system and/or a cooling system.
