In an embodiment, a method of manufacturing a semiconductor device includes the step of positioning a patterned mask over a dielectric layer. The dielectric layer comprises a low-temperature cure polyimide. The method further includes the steps of exposing a first surface of the dielectric layer through the patterned mask to an I-line wavelength within an I-line stepper, and developing the dielectric layer to form an opening.

In another embodiment, a method of manufacturing a semiconductor device includes the steps of forming a dielectric layer over a seed layer, positioning a patterned mask over the dielectric layer, wherein the dielectric layer comprising a low-temperature cure polyimide. The method further includes the steps of exposing a first surface of the dielectric layer to light of an I-line stepper, developing the dielectric layer to form an opening extending to a top surface of the seed layer and forming contact vias in the opening.

In yet another embodiment, a semiconductor device includes a first redistribution layer and a first redistribution passivation layer over the first redistribution layer. The first redistribution passivation layer includes a top surface and an opposing bottom surface with the top surface having indentions formed therein. The angle of the indentions is between about 2 degrees and about 8 degrees. The first redistribution passivation layer further includes an opening that exposes a portion of the first redistribution layer. Top corners of the opening are rounded in the range of approximately 0.3 to 0.5 Π rad.