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Method of manufacturing a semiconductor device and a semiconductor device

專利號
US11177179B2
公開日期
2021-11-16
申請人
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.（TW Hsinchu）
發(fā)明人
Hung-Li Chiang; Chao-Ching Cheng; Chih-Liang Chen; Tzu-Chiang Chen; Ta-Pen Guo; Yu-Lin Yang; I-Sheng Chen; Szu-Wei Huang
IPC分類
H01L21/8234; H01L29/66; H01L29/06; H01L27/088; G03F1/38; H01L21/308; H01L29/423; B82Y10/00; H01L29/08; H01L29/78; H01L29/775; H01L29/417; H01L29/786; H01L27/092; H01L21/8238
技術(shù)領(lǐng)域
layer,epitaxial,fet,drain,gaa,layers,gate,dielectric,in,fin
地域： Hsinchu

摘要

In a method, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. The first semiconductor layers are etched at a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, thereby forming a first source/drain space in which the second semiconductor layers are exposed. A dielectric layer is formed at the first source/drain space, thereby covering the exposed second semiconductor layers. The dielectric layer and part of the second semiconductor layers are etched, thereby forming a second source/drain space. A source/drain epitaxial layer is formed in the second source/drain space. At least one of the second semiconductor layers is in contact with the source/drain epitaxial layer, and at least one of the second semiconductor layers is separated from the source/drain epitaxial layer.

說明書

FIG. 29A shows a static random access memory (SRAM) cell diagram and FIG. 29B shows various transistor properties for the SRAM cell according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, dimensions of elements are not limited to the disclosed range or values, but may depend upon process conditions and/or desired properties of the device. Moreover, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed interposing the first and second features, such that the first and second features may not be in direct contact. Various features may be arbitrarily drawn in different scales for simplicity and clarity.

權(quán)利要求

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