白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Optoelectronic component and method for producing an optoelectronic component

專利號
US11177414B2
公開日期
2021-11-16
申請人
Osram OLED GmbH（DE Regensburg）
發(fā)明人
Tansen Varghese; Stefan Illek
IPC分類
H01L33/00; H01L33/22; H01L33/30; H01L33/38
技術(shù)領(lǐng)域
region,radiation,recess,layer,body,component,exit,second,first,electrical
地域： Regensburg

摘要

An optoelectronic component may include a semiconductor body and a radiation transmissive bonding layer. The semiconductor body may include a first region of a first conductivity type, a second region of a second conductivity type, and an active region. The active region may be disposed between the first region and the second region. The first region may include a recess and a contact region adjacent to the recess. The active region may be arranged to emit electromagnetic radiation. The semiconductor body may have a first radiation exit surface at a main surface of the second region remote from the active region, and a portion of the electromagnetic radiation may exit the semiconductor body through the first radiation exit surface. The semiconductor body may include a first electrical connection layer and a second electrical connection layer where the second electrical connection layer is arranged at least partially in the recess.

說明書

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
E) Detaching the growth substrate from the side of the first region remote from the active region. The growth substrate is detached from the side of the first region facing away from the active region by means of a laser lift-off process, for example, or thinned by a grinding process and then removed by an etching process.
F) forming a recess in the first region, the recess extending transverse to the main plane of extension of the first region and extending to the contact region. The recess can be produced by an etching process, for example.
G) depositing a first and a second electrical connection layer on the side of the first region remote from the active region. For example, the electrical connection layers may be made of a metal. The second electrical connection layer serves for contacting the second region of the semiconductor body and is located at least partially in the recess.

According to at least one embodiment of the method for producing an optoelectronic component, the surface of the second region facing away from the active region is roughened to produce a first radiation exit surface before or after method step B). This means, for example, that the surface of the first radiation exit surface is roughened by chemical etching. A roughened surface reduces the optical waveguide effect and thus advantageously increases the outcoupling efficiency of the optoelectronic component.

According to at least one embodiment of the method for producing an optoelectronic component, the surface of the first region facing away from the active region is roughened to produce a second radiation exit surface before or after method step E). This means that the surface of the second radiation exit surface is roughened by chemical etching after the growth substrate has been removed. This increases the efficiency of a radiation emission in both directions.

權(quán)利要求

1
微信群二維碼
意見反饋