FIG. 2 shows a schematic cross-section through an optoelectronic component 1 according to a second exemplary embodiment. FIG. 2 corresponds to FIG. 1E except for the dimensions, in particular the depth, of the recess 160 and the contact region 170. The recess 160 shown in FIG. 2 is completely formed within the first region 101 of the semiconductor body 10. This means that the recess 160 does not completely penetrate the first region 101. In this second exemplary embodiment, the contact region 170 extends from the second region 102 through the active region 103 to the first region 101. This eliminates penetration of the active region 103 by the recess 160 and advantageously results in a smaller area for non-radiative recombination processes.

In an n-doped first region 101, the pn-junction formed within the first region 101 between the n-doped first region 101 and the p-doped contact region 170 does not represent a short circuit, since this pn-junction has a higher forward voltage than the pn-junction of the active region 103.

FIG. 3A shows a first step of a method for manufacturing an optoelectronic component 1 according to a third exemplary embodiment. The first step corresponds to the first step shown in FIG. 1A of the first exemplary embodiment.