FIG. 4A shows a method step for manufacturing an optoelectronic component 1 according to a fourth exemplary embodiment. The preceding method steps of the fourth exemplary embodiment correspond to the method steps of the third exemplary embodiment shown in FIGS. 3A to 3D. In the fifth method step shown in FIG. 4A according to the fourth exemplary embodiment, the growth substrate 150 is detached from the semiconductor body 10 and thus a second radiation exit surface 10B is produced on the side of the first region 101 facing away from the active region 103. Then a recess 160 is introduced in the first region 101. A radiation transmissive dielectric 132 is applied to the second radiation exit surface 10B.

FIG. 4B shows a method step for manufacturing an optoelectronic component 1 according to the fourth exemplary embodiment, in which a first electrical connection layer 121 is applied to the second radiation exit surface 10B for making electrical contact with the first region 101 of the semiconductor body 10. A second electrical connection layer 122 for electrically contacting the second region 102 of the semiconductor body 10 is arranged at least partially in the recess 160. To establish the electrical contact, a contact region 170 is formed at the interface of the second electrical connection layer 122 and the second region 102 of the semiconductor body 10 by means of a high-temperature process step.