According to at least one embodiment of the optoelectronic component, the optoelectronic component includes a semiconductor body having a first electrical connection layer and a second electrical connection layer. The electrical connection layers can, for example, be made of a metal. The first electrical connection layer is used to make electrical contact with the first region of the semiconductor body. The second electrical connection layer is used to make electrical contact with the second region of the semiconductor body. The first and second electrical connection layers are arranged on the side of the first region facing away from the active region. The first radiation exit surface is free of electrical connection layers. The second electrical connection layer is arranged at least partially in the recess.

According to at least one embodiment of the optoelectronic component, the optoelectronic component includes a radiation transmissive carrier which is arranged downstream of the first radiation exit surface. The radiation transmissive carrier is materially bonded to the semiconductor body by means of a radiation transmissive bonding layer. The radiation transmissive carrier can be made of a material such as sapphire, glass, gallium phosphide or silicon carbide. The radiation transmissive bonding layer can, for example, be a dielectric layer. For example, the bonding layer can be formed from a benzocyclobutene (BCB)-based polymer, a silicon oxynitride (SiOxNy), a titanium oxide (TiOx) or an aluminum oxide (AlOx).

According to at least one embodiment of the optoelectronic component, the optoelectronic component includes,