According to at least one embodiment of the optoelectronic component, the extent of the contact region along the main extension plane of the semiconductor body corresponds to the extent of the recess along the main extension plane of the semiconductor body. The term “corresponds” means that the width of the recess does not deviate from the width of the contact region by more than 50%, such as by more than 25%, and alternatively by more than 10%. By such a corresponding expansion along the main extension plane a later lateral alignment of the recess to the contact region with the aim of a large overlapping of the recess and the contact region is simplified. The contact region can be both larger and smaller than the recess. The recess can also be adjacent to the contact region and be the same size as the contact region. Both the recess and the contact region are advantageously kept as small as possible in order to minimize electrical and optical losses due to a reduced area of the active region and increased optical absorption. The minimum size of the contact region and the recess results from the requirement to keep the contact resistance sufficiently low at a given electrical operating current with a given luminous efficacy. The overlap of the contact region and the recess can result, for example, from the manufacturing tolerances.

According to at least one embodiment of the optoelectronic component, the recess does not completely penetrate the first region of the semiconductor body. Compared to a recess completely penetrating the active region, a non-radiative recombination at the interface of the recess, especially in the active region, can be reduced advantageously. If the active region is not penetrated by the recess, the area for non-radiative recombination is advantageously reduced.