FIG. 6 shows an optoelectronic component 400 in which the optoelectronic semiconductor chip 401 consists of a radiation-emitting layer 402, or epitaxial layer, which is applied on a substrate 403 or carrier. The substrate 403 is in this case arranged between the radiation-emitting layer 402 and the conversion element 102. The substrate is transparent, or radiation-transmissive, for example made of sapphire, SiC, AlGaN, and is used for mixing the radiation emitted by the radiation-emitting layer 402.

FIGS. 7 and 8 show an optoelectronic component 500, 600, in which the semiconductor chip 501, 601 consists of a radiation-emitting layer 502, 602 and a substrate 503, 603, on which the radiation-emitting layer 502, 602 is applied. The radiation-emitting layer 502, 602 is in this case arranged between the substrate 503, 603 and the conversion element 102. The substrate 503 according to the fifth embodiment is in this case made of a radiation-nontransmissive material, for example of Si, Ge, GaAs, GaP or GaN, while the substrate 603 according to the sixth embodiment consists of a radiation-transmissive, or transparent, material, for example of SiC, sapphire, AlGaN.

FIGS. 9 to 11 show schematic representations of a cross section of an optoelectronic component according to a seventh, eighth and ninth embodiment. Common to all these embodiments is the feature according to which the upper side, i.e. the radiation-emitting side of the component, is planar, i.e. the component has a planar surface on the radiation-emitting side.