In the structure according to the seventh embodiment, the two optical elements 704, 714 are joined to one another by the planar side. Between the microlenses of the first optical 704 and the conversion element 102, there is a first encapsulation 730, which consists of transparent, or radiation-transmissive, material, for example silicone or epoxide. On the upper side 750 of the optoelectronic component 700, i.e. on the outermost face of the optoelectronic component 700 in the emission direction, there is a second encapsulation 731, which is configured in the same way as the first encapsulation 730 or may be different thereto. The second encapsulation 731 is likewise transparent, or radiation-transmissive. Because of the second encapsulation 731, the optoelectronic component 700 has a planar surface on the upper side 750. As an alternative, the second encapsulation 731 may also be omitted, so that the radiation exit face of the optoelectronic component 700 is formed directly by the second optical component 714.

FIG. 10 shows an eighth embodiment of the optoelectronic component 800, in which the semiconductor 801 is constructed as in the fourth embodiment. That is to say, the semiconductor chip 801 consists of a radiation emitting layer 802, or epitaxial layer, which is applied on a substrate 803 or carrier. The substrate 803 is in this case arranged between the radiation-emitting layer 802 and the conversion element 102. The substrate is transparent or radiation-transmissive. However, any other configuration, described in this application, of the semiconductor chip 801 may also be envisioned.