The optical element 804 is in this case constructed from microlenses 805, and is arranged inside the optoelectronic component 800 in such a way that the planar face of the optical element 804 forms the upper side 850 of the optical component 800. Provided between the conversion element 102 and the optical element 804, there is a radiation-transmissive encapsulation 830, which may be configured according to the first encapsulation 730 of the seventh embodiment.

FIG. 11 shows a ninth embodiment of the optoelectronic component 900, in which the semiconductor 901 is constructed as in the fourth embodiment. That is to say, the semiconductor chip 901 consists of a radiation-emitting layer 902, or epitaxial layer, which is applied on a substrate 903 or carrier. The substrate 903 is in this case arranged between the radiation-emitting layer 902 and the conversion element 102. The substrate is transparent or radiation-transmissive. However, any other configuration, described in this application, of the semiconductor chip 901 may also be envisioned.

In this embodiment, as in the first to sixth embodiments, the optical element 904 is arranged on the conversion element 102. The optical element 904 consists of microlenses 905, although any other configuration described may be envisioned. On the optical element 905, i.e. downstream of the optical element 905 in the emission direction, there is an encapsulation 930 of radiation-transmissive material which may be configured as the first encapsulation 730 of the seventh embodiment. The encapsulation 930 forms a planar surface on the upper side 950 of the optoelectronic component 900.