In S1, a semiconductor chip 101 is provided. In S2, which is optional and may therefore also be omitted, in order to protect the semiconductor chip 101, or in order to protect the metallization layer or epi layer of the semiconductor chip 101, a thin film, for example of silicone, is applied onto the semiconductor chip 101. In S3, a flat conversion layer is applied onto the semiconductor chip 101. In S4, the conversion layer is structured in order to form the portions 103 of the conversion element 102. This may be carried out by sawing or laser processing. The conversion layer may also be structured lithographically or by direct inscribing. An alternative to S3 and S4 is to produce the conversion element 102 beforehand in a separate mold casting process and then to apply it onto the semiconductor chip 101. In S5, which is likewise optional, encapsulation 106 may also be introduced between the portions 102. In S6, the optical element 104 is furthermore applied. The process ends with S7.

The optoelectronic component and the method for producing an optoelectronic component have been described with the aid of some embodiments in order to illustrate the underlying concept. The embodiments are not in this case restricted to particular feature combinations. Even though some features and configurations have been described only in connection with a particular embodiment or individual exemplary embodiments, they may respectively be combined with other features from other embodiments. It is likewise possible to omit or add features presented individually or particular configurations in embodiments, so long as the general technical teaching is still implemented.