By the subdivision of the conversion element into individual portions and arrangement of the conversion element on the semiconductor chip, as well as by the subsequent optical element, good mixing of the light emitted by the semiconductor chip and the converted light, and therefore a high color homogeneity, is achieved. The subsequent optical element may be arranged directly on or near to the conversion element. By this arrangement, a high color homogeneity is achieved in the far-field, particularly in the target plane. By the combination of a subdivided conversion element and arrangement of the portions of the conversion element close to the chip, the distance between the chip and the optical element can become smaller and a compact, in particular flat, design of the optoelectronic component is achieved. In particular, in the case of the component, the base face is not substantially larger than the face of the semiconductor chip. The lateral extent of the optical element is in this case only insubstantially greater than the face of the semiconductor chip.

In the scope of the present application, the term “on” is intended to be understood as meaning that the conversion element arranged on the semiconductor chip is in direct contact with the semiconductor chip or in indirect contact, for example via a layer or film.

According to one embodiment, the semiconductor chip includes regions with different emission power of the electromagnetic radiation. In this way, a particular emission characteristic of the semiconductor chip can be used, so that in cooperation with further component parts of the optoelectronic component the emission direction, color homogeneity or other optical quantities can be deliberately influenced.