FIG. 1 shows a schematic representation of a cross section of an optoelectronic component 100 according to a first embodiment.

The optoelectronic component 100 includes a semiconductor chip 101. The semiconductor chip 101 is a semiconductor chip based on a III-V semiconductor material. The semiconductor chip 101 is an LED chip. The semiconductor chip 101 emits visible electromagnetic radiation, or light, or alternatively the semiconductor chip 101 may also emit invisible radiation, for example UV radiation. The semiconductor chip 101 may also comprise further layers, for example apertures or covers for spatial modulation of the radiation emitted by the semiconductor chip 101.

The semiconductor chip 101 may be applied on a carrier (not shown). A conversion element 102 is arranged downstream of the semiconductor chip 101 in the emission direction and is applied on the semiconductor chip 101. The conversion element 102 is particularly in direct contact with the semiconductor chip 101, or at least in indirect contact, i.e. a layer or film may be provided between the semiconductor chip 101 and the conversion element 102. The layer or film is in this case radiation-transmissive. For example, a silicone layer having a thickness of from 0.5 to 50 μm may be provided.