FIG. 3 depicts a cross-sectional side view of the semiconductor device 100 subsequent to depositing a first electrode 306 on the metal connector 208. The first electrode 306 is deposited on the entire substrate, including the first area 510 and the second area 520. In embodiments of the invention in which the metal connector is not included, the first electrode 306 is deposited directly on the metal interconnect 102 arranged in the dielectric layer 101. Non-limiting examples of materials for the first electrode 306 (also referred to as a bottom electrode) include metals, for example, platinum, copper, silver, gold, ruthenium, iridium, nickel, titanium, titanium nitride, tantalum, tantalum nitride, zirconium nitride, or a combination thereof. The thickness of the first electrode 306 is typically less than 40 nm, so that the underlying metal structures (metal interconnect 102 or metal connector 208) are readable in subsequent lithography exposure of the alignment assisting component/alignment mark (see FIG. 5).