The alignment marks/alignment assisting components described in this invention are not limited to scanner alignment marks. By placing multiple marks/components in different shapes and meeting the specifications of different purposes/tools, the alignment mark/alignment assisting component can serve as overlay marks for overlay metrology, alignment marks for CDSEM (Critical Dimension Scanning Electron Microscope), alignment marks for defect inspection tools, etc.

FIG. 9 depicts a cross-sectional side view of the semiconductor device 100 subsequent to depositing a resist stack 930 on the hard mask layer 820. The resist stack 930 can include, for example, a planarization layer 920 (e.g., an organic planarization layer (OPL) or other spin-on polymeric coating), an anti-reflective layer 922, and a resist 924 (e.g., a photoresist); although, the resist stack 930 is not limited to these layers and materials. The resist 924 can be patterned by lithographic exposure. The pattern formed by the resist 924 will be transferred through the layers beneath to form the RRAM memory stack over the metal interconnect 102 in the first area 510. The resist 924 is aligned to the alignment mark 505 through the raised topography created at the hard mask layer 820, as the layers of the resist stack 930 (planarization layer 920 and anti-reflective layer 922) are transparent.