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Alignment through topography on intermediate component for memory device patterning

專利號
US11177437B2
公開日期
2021-11-16
申請人
International Business Machines Corporation(US NY Armonk)
發(fā)明人
Hao Tang; Michael Rizzolo; Injo Ok; Theodorus E. Standaert
IPC分類
H01L45/00; H01L23/544; H01L27/24
技術(shù)領(lǐng)域
alignment,layer,dielectric,electrode,metal,assisting,mark,depositing,in,or
地域: NY NY Armonk

摘要

An intermediate semiconductor device structure includes a first area including a memory stack area and a second area including an alignment mark area. The intermediate structure includes a metal interconnect arranged on a substrate in the first area and a first electrode layer arranged on the metal interconnect in the first area, and in the second area. The intermediate structure includes an alignment assisting marker arranged in the second area. The intermediate structure includes a dielectric layer and a second electrode layer arranged on the alignment assisting marker in the second area and on the metal interconnect in the first area. The intermediate structure includes a hard mask layer arranged on the second electrode area. The hard mask layer provides a raised area of topography over the alignment assisting marker. The intermediate structure includes a resist arranged on the hard mask layer in the first area.

說明書

Various embodiments of the present invention are described herein with reference to the related drawings. Alternative embodiments can be devised without departing from the scope of this invention. Although various connections and positional relationships (e.g., over, below, adjacent, etc.) are set forth between elements in the following description and in the drawings, persons skilled in the art will recognize that many of the positional relationships described herein are orientation-independent when the described functionality is maintained even though the orientation is changed. These connections and/or positional relationships, unless specified otherwise, can be direct or indirect, and the present invention is not intended to be limiting in this respect. Accordingly, a coupling of entities can refer to either a direct or an indirect coupling, and a positional relationship between entities can be a direct or indirect positional relationship. As an example of an indirect positional relationship, references in the present description to forming layer “A” over layer “B” include situations in which one or more intermediate layers (e.g., layer “C”) is between layer “A” and layer “B” as long as the relevant characteristics and functionalities of layer “A” and layer “B” are not substantially changed by the intermediate layer(s).

權(quán)利要求

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