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Method for inkjet printing an organic-inorganic perovskite

專利號(hào)
US11177440B2
公開日期
2021-11-16
申請人
AALTO UNIVERSITY FOUNDATION; ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL); SOLARONIX S.A.(FI Helsinki CH Ecublens CH Aubonne)
發(fā)明人
Syed Ghufran Hashmi; Merve Ozkan; David Martineau; Xiong Li; Shaik Mohammed Zakeeruddin; Michael Graetzel
IPC分類
H01L51/42; H01L51/00
技術(shù)領(lǐng)域
perovskite,solar,precursor,in,ink,printing,cation,preferably,said,inkjet
地域: Helsinki

摘要

The present invention provides a method for depositing an organic-inorganic perovskite, the method comprising the step of depositing a perovskite precursor solution comprising one or more organic cation, wherein said precursor solution preferably deposited by inkjet printing. The method is particularly useful in the manufacture of perovskite solar cells. For depositing the perovskite, a perovskite precursor solution or ink is preferably used, which comprises an organic cation carrying an anchoring group, such as 5-ammonium valeric acid. Surprisingly, the presence of the latter compound renders the precursor solutions stable and suitable for inkjet printing.

說明書

In a preferred embodiment, the method of the invention concerns the manufacturing of a perovskite solar cell in which a porous counter electrode is deposited before deposition of the perovskite precursor solution, and the precursor solution is deposited onto the porous counter electrode so as to infiltrate the latter and to get in contact with the surface increasing structure, preferably filling the pores of the latter.

In an embodiment, such cells comprise a subassembly or sub-entity comprising at preferably at least a porous n-type semiconductor layer, a porous insulating or space layer, a porous counter electrode and a perovskite deposited to be in contact with said porous n-type semiconductor layer. Such a configuration has been disclosed, for example, at the example of the TiO2/ZrO2/C configuration disclosed in reference 21 (Z. Ku et al, 2013) and reference 12 (A. Mei et al, 2014).

The particularity with cells comprising such a subassembly is that the counter electrode is porous and is deposited before the deposition of the perovskite. Without wishing to be bound by theory, it is speculated that the above is possible because a space layer has been provided, for example comprising and/or consisting of an insulating material, such as ZrO2, on top of the n-type semiconductor layer. For the purpose of the present invention, an insulating material is a material through which electrons will not flow by electronic motion during operation of the device under normal circumstances.

權(quán)利要求

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