Organic electroluminescent device
摘要
說明書
A hole transfer layer was formed on the hole injection layer by vacuum depositing 4-4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB) (300 ?), a material transferring holes.
Subsequently, an electron blocking layer was formed on the hole transfer layer to a film thickness of 100 ? by vacuum depositing the following TCTA.
Subsequently, a light emitting layer was formed on the electron blocking layer to a film thickness of 200 ? by vacuum depositing Compound P4 synthesized in Preparation Example 4 and Compound P5 synthesized in Preparation Example 5 as a host, and a pyrene-based dopant of PL Max 452 nm.
On the light emitting layer, an electron injection and transfer layer was formed to a thickness of 300 ? by vacuum depositing Compound P1 synthesized in Preparation Example 1. A cathode was formed on the electron injection and transfer layer by depositing lithium fluoride (LiF) to a thickness of 10 ? and aluminum to a thickness of 1,000 ? in consecutive order.
An organic electroluminescent device was manufactured by maintaining, in the above-mentioned processes, the deposition rates of the organic materials at 0.4 ?/sec to 1 ?/sec, the deposition rates of the lithium fluoride and the aluminum of the cathode at 0.5 ?/sec and 2 ?/sec, respectively, and the degree of vacuum during the deposition at 5×10?8 torr to 8×10?8 torr.
An organic electroluminescent device was manufactured in the same manner as in Example 1 except that Compound P6 and Compound P5 were used as the host material.
An organic electroluminescent device was manufactured in the same manner as in Example 1 except that only Compound P5 was used as the host material.
