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Flexible display device and manufacturing method

專(zhuān)利號(hào)
US11177448B2
公開(kāi)日期
2021-11-16
申請(qǐng)人
BOE TECHNOLOGY GROUP CO., LTD.(CN Beijing)
發(fā)明人
Shuai Zhang; Yueping Zuo; Libin Liu
IPC分類(lèi)
H01L51/56; H01L51/00; H01L27/32
技術(shù)領(lǐng)域
layer,flexible,cutting,etching,region,display,tft,substrate,etch,bending
地域: Beijing

摘要

The present disclosure provides a flexible display device and a manufacturing method. The manufacturing method includes: forming a layer of flexible display devices on a support plate; etching the layer of flexible display devices on the support plate to expose a portion of the support plate at a cutting region, the cutting region being a predetermined region between two adjacent flexible display devices; and removing the layer of flexible display devices from the support plate after the etching process so as to obtain a plurality of flexible display devices separated from each other.

說(shuō)明書(shū)

In some embodiments of the present disclosure, during the manufacture of the flexible display device, it is necessary to etch the layers at the bending region 2 twice. In order to reduce the number of the etching processes and reduce the manufacture cost, the layers at the cutting region 1 may be etched when etching the layers at the bending region 2 for the first time and the second time. For example, subsequent to the formation of the buffer layer 5 and the TFT array layer 6 on the flexible substrate 4, a first etching process at the cutting region 1 may be performed at the same time with a first etching process at the bending region, so as to remove the portion of the TFT array layer 6 at the cutting region 1, thereby to expose the buffer layer 5.

Next, a second etching process at the cutting region 1 may be performed at the same time with a second etching process at the bending region 2, so as to remove the portion of the buffer layer 5 at the cutting region 1, thereby to expose the flexible substrate 4 under the buffer layer 5.

The step of forming the organic material layer 7 on the TFT array layer 6 may be performed between the first etching process and the second etching process, i.e., the organic material layer 7 may be formed after removal of the portion of the TFT array layer 6 at the cutting region 1 and exposure of the buffer layer 5. Otherwise, the organic material layer 7 may be formed after the second etching process, i.e., after the removal of the portion of the buffer layer 5 at the cutting region 1.

權(quán)利要求

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