There are no particular restrictions on the thickness of the light-emitting layer, but in general, it is preferably from 2 to 500 nm, and from the standpoint of external quantum efficiency, it is more preferably from 3 to 200 nm and even more preferably from 5 to 100 nm.
The light-emitting layer in the element of the present invention may be constituted solely from a light-emitting material or may also be made up of a mixed layer of a host material and a light-emitting material. There may be just one type of light-emitting material, or two or more types may be used. The host material is preferably a charge transport material. There may be just one type of host material, or two or more types may be used, examples of which include a mixed configuration of an electron transporting host material and a hole transporting host material.
Furthermore, a material which does not have a charge transporting property and does not emit light may also be included in the light-emitting layer.
Moreover, the light-emitting layer may be a single layer or a multilayer of two or more layers, and each of the light-emitting layers may also emit light of a different color.
In addition, in the light-emitting layer, it is also preferable for a host material or the like other than the light-emitting material to be a planar material.
The amount of the light-emitting material contained in the light-emitting layer of the present invention is preferably 0.1 to 30 wt %, more preferably 1 to 25 wt %, and especially preferably 5 to 20 wt %.
<Host Material>