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Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays

專利號(hào)
US11177465B2
公開日期
2021-11-16
申請人
Atom H2O, LLC(US CA Escondido)
發(fā)明人
Huaping Li
IPC分類
H01L33/00; H01L51/52; H01L51/56; H01L51/05; H01L27/15; H01L27/32; H01L33/06; H01L33/24; H01L33/28; H01L33/30; H01L33/32; H01L33/34; H01L33/40; H01L33/52; H01L51/00; H01L33/08
技術(shù)領(lǐng)域
nw,ag,vplets,electrode,conductive,electrodes,porous,emitting,dielectric,leps
地域: CA CA Escondido

摘要

Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.

說明書

In still yet other embodiments the at least one conductive porous electrode is formed from a plurality of nanowires formed into one of the group of a random or patterned network of a plurality of metal or graphene nanowires, a nanowire metal mesh, a nanowire grid, a nanowire network encased within an elastomeric material, holey copper and holey graphene. In some such embodiments the conductive porous electrode comprises a silver nanowire network with a surface coverage less than 10%, a sheet resistance less than 15Ω/sq, and a transmission greater than 75%, and is formed by a process selected from spin-coating, spray coating, aerosol jet printing, inkjet printing, screen printing, gravure printing, and flexography printing the silver nanowire network followed by thermal annealing the silver nanowire network in an inert environment at a temperature range of from about 60 to 160° C. for a duration of about 10 to 60 minutes, and washing the silver nanowire network with isopropanol. In other such embodiments the conductive porous electrode is formed by spin-coating a Ag nanowire isopropanol solution with a concentration range of from about 0.1 mg/mL to 10 mg/mL with a spinning speed range of from about 800 to 5000 rpm, and repeating said spin-coating from about 1 to 20 times. In still other such embodiments the conductive porous electrode is formed by aerosol jet printing a Ag nanowire isopropanol solution with a concentration range of from about 0.1 mg/mL to 10 mg/mL using a sheath gas flow of about 20 to 50 cubic centimeters per minute, a carrier gas flow of about 10 to 20 cubic centimeters per minute, a nozzle diameter of about 60 to 300 μm, fiducial management with an overlay registration of about 1 to 2 μm, and a pneumatic atomization with about a 600 cubic centimeters per minute atomizer flow to generate an aerosol having diameter of from about 1 to 5 μm. In yet other such embodiments the porous electrode is one of a metal mesh, metal grid, holey copper and holey graphene formed by a method selected from evaporating metal using a metal frame mask, and patterning the metal using photolithography.

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