白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays

專利號(hào)
US11177465B2
公開日期
2021-11-16
申請(qǐng)人
Atom H2O, LLC(US CA Escondido)
發(fā)明人
Huaping Li
IPC分類
H01L33/00; H01L51/52; H01L51/56; H01L51/05; H01L27/15; H01L27/32; H01L33/06; H01L33/24; H01L33/28; H01L33/30; H01L33/32; H01L33/34; H01L33/40; H01L33/52; H01L51/00; H01L33/08
技術(shù)領(lǐng)域
nw,ag,vplets,electrode,conductive,electrodes,porous,emitting,dielectric,leps
地域: CA CA Escondido

摘要

Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.

說明書

In still yet other embodiments the dielectric layer is formed by aerosol jet printing one of a dielectric polymer, an ionic gel, and a dielectric polymer/nanoparticle composite in an organic solution having a concentration range of from about 0.1 mg/mL to 10 mg/mL using a pneumatic atomization with about 600 cubic centimeters per minute atomizer flow or ultrasonic atomization with power range from 20-48V to generate an aerosol in diameter of from about 1 to 5 μm, a sheath gas flow of from about 20 to 50 cubic centimeters per minute, a carrier gas flow of from about 10 to 20 cubic centimeters per minute, a nozzle diameter of from about 60 to 300 μm, and a fiducial management with an overlay registration of from about 1 to 2 μm.

In still yet other embodiments the method includes forming at least two capacitors and two gate electrodes, including a first capacitor having a dielectric layer disposed between the drain electrode and a first gate electrode and a second capacitor disposed between the source electrode and a second gate electrode, wherein at least the drain and source electrodes are conductive porous electrodes having a surface coverage of no greater than 50%, such that both of the dielectric layers make direct contact with the light emitting layer through the open portions of the porous electrodes.

Still other embodiments are directed to vertical light emitting displays including a plurality of pixels comprising a plurality of vertical light emitting transistors electronically coupled into a thin film transistor backplane, each vertical light emitting transistor including:

    權(quán)利要求

    1
    微信群二維碼
    意見反饋