Although the above benchmarked properties have been established for conductive porous electrode materials formed from Ag NW nanowires, it should be understood that any suitable conductive material capable of being formed into conductive porous electrode materials having suitable transmittance, resistivity and surface coverage properties may be used in embodiments, including, for example, Ag, Au, Cu and graphene. In many embodiments, the porous conductive electrodes are formed from NW networks formed from high aspect ratio nanowires having an aspect ratio of, for example, >1000. In some embodiments the NW networks are formed from a plurality of metallic nanowires, such as for example, Ag having a diameter of less than around 200 nm, in some embodiments less than around 35 nm, and a length of greater than around 1 μm, in some embodiments greater than 35 μm. Further, it should be understood that the conductive porous electrode materials may be formed of randomly deposited NW (such as that shown in the SEM of an exemplary Ag NW conductive network presented in FIG. 2) or engineered NW that are arranged in grids or meshes or atop supportive materials such as holey copper or holey graphene, and may also be produced in any shape and dimension suitable for use within a particular VPLET device. In some embodiments, the conductive porous electrodes formed of NW networks are produced as thin sheets or strips that are sized to provide a supportive conductive surface to a particular PLED layer within a VPLET device.

Finally, as will be described in greater detail below, many embodiments are directed to OLETs and VPLETs that incorporate such conductive porous electrode materials, such as NW networks, including Ag NW networks for use, for example, as supportive electrodes for LET and LED devices.