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Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays

專利號
US11177465B2
公開日期
2021-11-16
申請人
Atom H2O, LLC(US CA Escondido)
發(fā)明人
Huaping Li
IPC分類
H01L33/00; H01L51/52; H01L51/56; H01L51/05; H01L27/15; H01L27/32; H01L33/06; H01L33/24; H01L33/28; H01L33/30; H01L33/32; H01L33/34; H01L33/40; H01L33/52; H01L51/00; H01L33/08
技術(shù)領(lǐng)域
nw,ag,vplets,electrode,conductive,electrodes,porous,emitting,dielectric,leps
地域: CA CA Escondido

摘要

Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.

說明書

More detailed descriptions of these exemplary structures, their construction and performance is provided in the Exemplary Embodiments provided below. However, although examples of specific structures and combinations of materials and layers have been discussed, it should be understood that the various components described herein may be combined and arranged in a variety of device architectures contemplated within the disclosed embodiments.

Methods for Manufacturing LET and LED Devices

Some embodiments are directed to methods of depositing NW conductive materials for conductive porous electrodes to enable VPLETs and AMOLEDs generally. Although any suitable method of deposition may be used with the current invention including, for example, additive manufacturing, molecular beam epitaxy (MBE) chemical vapor deposition (CVD), atomic layer deposition (ALD), and plasma enhanced using low cost printing, spin-coating, spray coating methods, in many embodiments, printing, such as aerosol jet printing, may be used to deposit one or more of the layers of the LET and LED devices, including LEP inks as active light emitting materials and NW inks as transparent conductive porous electrodes of VPLETs on substrates. In particular, it has been found that printing methods, such as aerosol, roll to roll, screen and ink jet, for example, may be used to form NW networks, nanoparticles, polymer emitters, ionic gels, and conjugated polyelectrolytes that can be used to improve PLET performance, and to produce NW porous conductive electrode supported polymer light emitting devices.

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