As shown in FIG. 9a, in this exemplary embodiment, a printed Ag NW enabled VPLET is proposed comprised of printed Ag NW networks as a porous conductive Source electrode, LEPs (blue: PFO, green: super yellow, red: MEH-PPV) as channel materials (PLED), PEDOT/PSS coated ITO as a Drain electrode, and SiO2 as the dielectric layer for gate modulation. Using aerosol jet printing, uniform and thin-layer Ag NW networks and 200 nm LEPs (blue: PFO, green: super-yellow, red: MEH-PPV) may be printed in various substrates. The sheet resistance of printed Ag NW networks is about 15Ω/sq. Its SEM image is shown in FIG. 9b, exhibiting great uniformity. The porous structure of Ag NW networks permits the direct contact between LEPs and SiO2 dielectric layer. FIG. 9b also shows a photograph of a printed MEH-PPV polymer with a uniform surface that is essential for organic devices. In this embodiment, by laminating PEDOT/PSS coated ITO with printed MEH-PPV on Silicon wafer, Ag NW enabled VPLETs with an ITO electrode on silicon wafer may be fabricated. Alternatively, printed Ag NW networks can be laminated with MEH-PPV fabricated on ITO by slight pressing and thermal treatment. To improve the performance of Ag NW enabled VPLETs, it is also possible to coat the SiO2 layer with octyltriethoxysiliane (OTS) to improve the gate modulation and treating Ag NW network with CPE or polyethylimine (PEI) to enhance electron injection. The printed Ag NW enabled VPLETs may be characterized in a glovebox using a Keithley 4200 Semiconductor Characterization System (SCS). Using such process it is possible to fabricate Ag NW enabled VPLETs with characteristics outperforming those of PLEDs, with low supply and driving voltages, and full aperture ratio.
