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Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays

專利號(hào)
US11177465B2
公開(kāi)日期
2021-11-16
申請(qǐng)人
Atom H2O, LLC（US CA Escondido）
發(fā)明人
Huaping Li
IPC分類
H01L33/00; H01L51/52; H01L51/56; H01L51/05; H01L27/15; H01L27/32; H01L33/06; H01L33/24; H01L33/28; H01L33/30; H01L33/32; H01L33/34; H01L33/40; H01L33/52; H01L51/00; H01L33/08
技術(shù)領(lǐng)域
nw,ag,vplets,electrode,conductive,electrodes,porous,emitting,dielectric,leps
地域： CA CA Escondido

摘要

Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.

說(shuō)明書(shū)

  • at least two capacitors and two gate electrodes, a first capacitor having a dielectric layer disposed between the drain electrode and a first gate electrode and a second capacitor disposed between the source electrode and a second gate electrode; and
  • wherein the drain and source electrodes are conductive porous electrodes that have sufficient open portions to exhibit a surface coverage of no greater than 50%, such that both of the dielectric layers make direct contact with the light emitting layer through the open portions of the conductive porous electrodes.

    • In still other embodiments, the light emitting layer is formed of a light emitting material selected from the group consisting of a crystalline semiconductor selected from GaN, GaP, GaAs, AlGaAs, GaAsP, AlGaInP, ZnSe, InGaN and AlN; a semiconductor nanowire selected from Si and GaAs; a quantum wall; an organometallic complex; an Ir organometallic complex; a small organic conjugated molecule; porphyrin; pentacene; and a conjugated polymer selected from PPV, PVK, MEH-PPV, PPF, PFO and PPP.

    In yet other embodiments, at least one of the drain, source, or gate electrodes comprise an electrode material selected from graphene sheets, doped Si, ZTO, ITO, Au, Al, Cu, Ni, Mo, Cr, Ag, metal nanowires, metal plate, metal meshes, metal grids, holey copper, holey graphene, conductive polymers, and a low coverage network of a plurality of nanowires.

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