白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays

專利號(hào)
US11177465B2
公開(kāi)日期
2021-11-16
申請(qǐng)人
Atom H2O, LLC(US CA Escondido)
發(fā)明人
Huaping Li
IPC分類
H01L33/00; H01L51/52; H01L51/56; H01L51/05; H01L27/15; H01L27/32; H01L33/06; H01L33/24; H01L33/28; H01L33/30; H01L33/32; H01L33/34; H01L33/40; H01L33/52; H01L51/00; H01L33/08
技術(shù)領(lǐng)域
nw,ag,vplets,electrode,conductive,electrodes,porous,emitting,dielectric,leps
地域: CA CA Escondido

摘要

Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.

說(shuō)明書(shū)

The market desire for high quality, large-size and low-cost displays are driving a need for improved display products. The current disclosure provides embodiments describing, among other things:

    • Simple, scalable, reproducible, and environmental robust techniques for printing porous conductive electrodes, semiconducting channel (LEPs), and organic gating materials;
    • Printed porous conductive electrode enabled vertical polymer light emitting transistors on silicon wafer with high conductance at lower power and low voltage;
    • Printed transparent porous conductive electrodes from NW films;
    • Singly-gated or doubly-gated porous conductive electrode enabled vertical polymer light emitting transistors with porous conductive electrodes on PS-PMMA-PS/EMIM TFSI ionic gel coated NW substrate to achieve >5% external efficiency, 10,000 Cd/m2 brightness and full aperture at 4 V supply voltage and sub 1 V driving voltage.

權(quán)利要求

1
微信群二維碼
意見(jiàn)反饋