• forming a light emitting layer formed of at least one light emitting material, the light emitting layer having first and second sides;
• forming at least one of a conductive drain electrode and a conductive source electrode in conductive relation with at least one side of said light emitting layer;
• forming a least one capacitor including a dielectric layer formed of at least one dielectric material, the at least one dielectric layer having first and second sides in conductive relation to one of either the conductive source or drain electrodes, and a conductive gate electrode; and
• encapsulating the formed layers using one of either a glass or barrier film;
• wherein at least the electrode disposed between the light emitting layer and the dielectric layer is a conductive porous electrode that has sufficient open portions to exhibit a surface coverage of no greater than 50%, such that the dielectric layer makes direct contact with the light emitting layer through the open portions of the conductive porous electrode.

In other embodiments the method includes one of the following combination of steps:

• • disposing the light emitting material atop a PEDOT coated ITO substrate, disposing one of either the drain or source electrode atop the light emitting layer, disposing the dielectric layer atop the one of either the drain or source electrode present atop the light emitting layer, and disposing the gate electrode atop the dielectric layer;