The semiconductor package 200A may include a frame 210 having first to third through-holes 210HA, 210HB, and 210HC and including a plurality of wiring layers 212a and 212b, a first semiconductor chip 221 disposed in the first through-hole 210HA and having a first active surface having first connection pads 221P disposed thereon and a first inactive surface opposing the first active surface, a second semiconductor chip 222 disposed in the second through-hole 210HB and having a second active surface having second connection pads 222P disposed thereon and a second inactive surface opposing the second active surface, passive components 225 disposed in the third through-hole 210HC, an encapsulant 230 covering at least portions of each of the frame 210, the first inactive surface of the first semiconductor chip 221, the second inactive surface of the second semiconductor chip 222, and the passive components 225 and filling at least portions of each of the first to third through-holes 210HA, 210HB, and 210HC, and a connection structure 240 disposed on the frame 210, the first active surface of the first semiconductor chip 221, the second active surface of the second semiconductor chip 222, and the passive components 225 and including redistribution layers 242 electrically connected to each of the first connection pads 221P, the second connection pads 222P, and the passive components 225.