Antenna module
摘要
說明書
The frame 210 may include the wiring layers 212a and 212b to thus reduce the number of layers of the connection structure 240. In addition, the frame 210 may improve rigidity of the semiconductor package 200A depending on certain materials of an insulating layer 211, and serve to secure uniformity of a thickness of the encapsulant 230. A vertical electrical path may be provided in the semiconductor package 200A by the wiring layers 212a and 212b and connection vias 213 of the frame 210. The frame 210 may have the first to third through-holes 210HA, 210HB, and 210HC. The first semiconductor chip 221, the second semiconductor chip 222, and the passive components 225 may be disposed side by side in the first to third through-holes 210HA, 210HB, and 210HC, respectively, to be spaced apart from the frame 210 by predetermined distances. Side surfaces of the semiconductor chips 221 and 222 and the passive components 225 may be surrounded by the frame 210. However, such a form is only an example and may be variously modified to have other forms, and the frame 210 may perform another function depending on such a form.
