A metal layer 215 may further be disposed on each of walls of the through-holes 210HA, 210HB, and 210HC of the frame 210, if necessary. The metal layer 215 may be formed over the entire wall of each of the through-holes 210HA, 210HB, and 210HC to surround the semiconductor chips 221 and 222 and the passive components 225. Therefore, heat dissipation characteristics may be improved, and an electromagnetic wave shielding effect may be achieved. The metal layer 215 may extend to an upper surface and a lower surface of the frame 210, that is, the upper surface and the lower surface of the insulating layer 211. A material of the metal layer 215 may be a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti), or alloys thereof. The metal layer 215 may be electrically connected to ground patterns and/or power patterns of the first wiring layer 212a and/or the second wiring layer 212b to be used as a ground plane.