Each of the semiconductor chips 221 and 222 may be an integrated circuit (IC) in a bare state, provided in an amount of several hundred to several million or more elements integrated in a single chip. For example, the IC of the first semiconductor chip 221 may be a radio frequency integrated circuit (RFIC), and the IC of the second semiconductor chip 222 may be a power management integrated circuit (PMIC). The semiconductor chips 221 and 222 may include bodies on which various circuits are formed, respectively, and the connection pads 221P and 222P may be formed on active surfaces of the bodies, respectively. The body may be formed on the basis of, for example, an active wafer. In this case, a base material of the body may be silicon (Si), germanium (Ge), gallium arsenide (GaAs), or the like. The connection pads 221P and 222P may electrically connect the semiconductor chips 221 and 222 to other components, respectively, and a material of each of the connection pads 221P and 222P may be a conductive material such as aluminum (Al), but is not limited thereto. The active surfaces of the semiconductor chips 221 and 222 refer to surfaces of the semiconductor chip 221 and 222 on which the connection pads 221P and 222P are disposed, and the inactive surfaces of the semiconductor chips 221 and 222 refer to surfaces of the semiconductor chips 221 and 222 opposing the active surfaces. Although not illustrated in the drawing, passivation layers having openings exposing at least portions of the connection pads 221P and 222P and formed of an oxide layer, a nitride layer, or the like, may be formed on the active surfaces of the semiconductor chips 221 and 222. The semiconductor chips 221 and 222 may be disposed in a face-up form to thus have minimum signal paths up to the antenna substrate 100A.