A plurality of electrical connection structures 260 electrically connected to the exposed redistribution layer 242 may be disposed on the openings 251 of the first passivation layer 250. The electrical connection structures 260 may be configured to physically and/or electrically connect the semiconductor package 200A to the antenna substrate 100A. Each of the electrical connection structures 260 may be formed of a low melting point metal, for example, tin (Sn) or an alloy including tin (Sn), more specifically, a solder. However, this is only an example, and a material of each of the first electrical connection structures 260 is not particularly limited thereto. Each of the electrical connection structures 260 may be a land, a ball, a pin, or the like. The electrical connection structures 260 may be formed as a multilayer or single layer structure. When the electrical connection structures 260 are formed as a multilayer structure, the electrical connection structures 260 may include a copper (Cu) pillar and a solder. When the electrical connection structures 260 are formed as a single layer structure, the electrical connection structures 260 may include a tin-silver solder or copper (Cu). However, this is only an example, and the electrical connection structures 260 are not limited thereto. The number, an interval, a disposition form, and the like, of electrical connection structures 260 are not particularly limited, but may be sufficiently modified depending on design particulars by those skilled in the art.