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Chip-scale radio-frequency localization devices and associated systems and methods

專利號
US11177554B2
公開日期
2021-11-16
申請人
Humatics Corporation（US MA Waltham）
發(fā)明人
Gregory L. Charvat; David A. Mindell
IPC分類
H01Q1/22; G01S13/87; H01Q1/52; H01Q3/36; H01Q9/04; H01Q9/27; G01S5/14; H01Q1/38; H01Q9/26; H04B5/00; H04W4/02; H04W56/00; H01Q1/24; H01Q5/10; G01S5/02; H04W64/00; G01S11/02
技術(shù)領(lǐng)域
rf,antenna,frequency,target,signals,transmit,receive,signal,may,circuitry
地域： MA MA Waltham

摘要

A device comprising: a substrate; a semiconductor die mounted on the substrate; a transmit antenna fabricated on the substrate and configured to transmit radio-frequency (RF) signals at least at a first center frequency; a receive antenna fabricated on the substrate and configured to receive RF signals at least at a second center frequency different than the first center frequency; and circuitry integrated with the semiconductor die and configured to provide RF signals to the transmit antenna and to receive RF signals from the receive antenna.

說明書

The semiconductor die 504 may be a silicon die, for instance from a bulk silicon wafer or silicon-on-insulator (SOI) wafer. In some embodiments, the semiconductor die 504 may be a single crystal silicon die. In some embodiments, the semiconductor die 504 may be a CMOS die, a BiCMOS die, a GaAs die, a GaN die, or may be formed of any other suitable semiconductor material. In some embodiments, the semiconductor die 504 may be flip-chip bonded to substrate 505. In other embodiments, the semiconductor die 504 may be wire bonded to the substrate 505 or mounted on substrate 505 in any other suitable way.

權(quán)利要求

1
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