As shown in FIG. 3, the radio frequency power amplifier provided by the present embodiment includes three stages of amplifier circuits, a first bias circuit, a current detection feedback circuit and a power detection feedback circuit. In the three stages of amplifier circuits, a first stage of amplifier circuit includes a transistor 301 and an inductor 302; a second stage of amplifier circuit includes a transistor 304 and an inductor 305; and a third stage of amplifier circuit includes a transistor 308a, a transistor 308b, a transistor 308c and an inductor 309. The first bias circuit includes a transistor 313, a resistor 310, a diode 311 and a diode 312. The structures of the first stage of amplifier circuit and the second stage of amplifier circuit are identical to the structure of the first stage of amplifier circuit in Embodiment 1, the structure of the third stage of amplifier circuit is identical to the structure of the second stage of amplifier circuit in Embodiment 1, and the structures are not repeated herein. The structure of the first bias circuit is identical to the structure of the first bias circuit in Embodiment 1, and is not repeated herein. Similarly, the output power of the first stage of amplifier circuit enters a base of the transistor 304 of the second stage of amplifier circuit through a collector of the transistor 301 and a capacitor 303. The output power of the second stage of amplifier circuit respectively enters bases of the transistor 308a, the transistor 308b and the transistor 308c through a collector of the transistor 304 and a capacitor 306a, a capacitor 306b and a capacitor 306c. An emitter of the transistor 313 of the first bias circuit is correspondingly connected to bases of the transistor 308a, the transistor 308b and the transistor 308c respectively through a resistor 307a, a resistor 307b and a resistor 307c, and the bias voltage is provided for the transistor 308a, the transistor 308b and the transistor 308c of the third stage of amplifier circuit.