As shown in FIG. 5, the radio frequency power amplifier provided by the present embodiment includes three stages of amplifier circuits, a first bias circuit, a current detection feedback circuit and a power detection feedback circuit. In the three stages of amplifier circuits, a first stage of amplifier circuit includes a transistor 501 and an inductor 502; a second stage of amplifier circuit includes a transistor 505 and an inductor 504; and a third stage of amplifier circuit includes a transistor 508a, a transistor 508b, a transistor 508c and an inductor 509. The first bias circuit includes a transistor 513, a resistor 510, a diode 511 and a diode 512. The structures of the first stage of amplifier circuit, the second stage of amplifier circuit and the third stage of amplifier circuit are identical to the structures of the first stage of amplifier circuit, the second stage of amplifier circuit and the third stage of amplifier circuit in Embodiment 3, the structure of the first bias circuit is identical to the structure of the first bias circuit in Embodiment 1, and are not repeated herein. Similarly, the output power of the first stage of amplifier circuit enters a base of the transistor 505 of the second stage of amplifier circuit through a collector of the transistor 501 and a capacitor 503, the output power of the second stage of amplifier circuit respectively enters bases of the transistor 508a, the transistor 508b and the transistor 508c of the third stage of amplifier circuit through the collector of the transistor 505, a capacitor 506a, a capacitor 506b and a capacitor 506c. An emitter of the transistor 513 of the first bias circuit is correspondingly and respectively connected to the bases of the transistor 508a, the transistor 508b and the transistor 508b through a resistor 507a, a resistor 507b and a resistor 507c, and the bias voltage is provided for the transistor 508a, the transistor 508b and the transistor 508c of the third stage of amplifier circuit.