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Field effect transistor circuits

專利號
US11177786B1
公開日期
2021-11-16
申請人
Ronald Quan
發(fā)明人
Ronald Quan
IPC分類
H03G3/30; H03G1/00; H03G3/00
技術領域
fet,q1b,voltage,q1a,drain,rfb,vds,u1a,amplifier,u1b
地域: CA CA Cupertino

摘要

A number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.

說明書

? S ? S ? [ 2 ? ( 1 - Vc V ? p ) ? ( V ? d ? s - V ? p ) ]
and this results in a drain to source resistance, Rds, that is no longer dependent on Vds, and to a first approximation Rds is now dependent or a function of the control voltage, Vc:

R d ? s = 1 / { I D ? S ? S ? [ - 2 ? ( 1

權利要求

1
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