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Field effect transistor circuits

專利號(hào)
US11177786B1
公開日期
2021-11-16
申請人
Ronald Quan
發(fā)明人
Ronald Quan
IPC分類
H03G3/30; H03G1/00; H03G3/00
技術(shù)領(lǐng)域
fet,q1b,voltage,q1a,drain,rfb,vds,u1a,amplifier,u1b
地域： CA CA Cupertino

摘要

A number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.

說明書

V ? p ) ? ( 1 - Vc V ? p ) ] }

Although FIG. 3 when used as a voltage controlled resistor for an attenuator circuit with a more linear drain to source resistance is prior art, this circuit have been found to have a new use as a substantially symmetrical voltage controlled variable limiter or a substantially symmetrical voltage controlled variable clipping level circuit when the input signal is increased to an amplitude beyond the constraints described by

R d ? s = 1 / { I D ? S ? S ? [ - 2 ? (

權(quán)利要求

1
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