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Field effect transistor circuits

專利號
US11177786B1
公開日期
2021-11-16
申請人
Ronald Quan
發(fā)明人
Ronald Quan
IPC分類
H03G3/30; H03G1/00; H03G3/00
技術(shù)領(lǐng)域
fet,q1b,voltage,q1a,drain,rfb,vds,u1a,amplifier,u1b
地域： CA CA Cupertino

摘要

A number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.

說明書

( 1 Vp ) ? ( 1 - Vgs Vp ) - 2 ? ( Vds Vp ) ? ( 1 Vp ) ] }

FIG. 2 shows an enhancement mode FET (e.g., Q2) voltage controlled resistor prior art circuit. In this circuit at 0 volts across the gate and source, the drain to source resistance is nearly infinite and the output signal Vout is almost equal to Vin. If the gate to source voltage of Q2 is increased to a positive voltage sufficiently high to provide a very low resistance from its drain to source terminal, only a small fraction of Vin will pass to Vout.

For an enhancement device, drain current, Id, can be characterized by the following equation in the FET's ohmic or triode region that is generally used for resistance across the drain and source terminals:

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