Leakage current reduction type radio frequency switch device
地域：
Suwon-si
摘要
A radio frequency switching device includes: a first series switching circuit connected between a first terminal and a second terminal; a first shunt switching circuit connected between one end of the first series switching circuit and a ground; a voltage generation circuit configured to generate a first gate voltage to be output to the first series switching circuit, to generate a second gate voltage to be output to the first shunt switching circuit, and to generate a bias voltage higher than the second gate voltage to control the first shunt switching circuit to enter an off state; a first resistance circuit connected between a signal line between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and a ground terminal of the first shunt switching circuit.
說明書
This application claims the benefit under 35 U.S.C. § 119(a) of Korean Patent Application No. 10-2018-0079377 filed on Jul. 9, 2018 in the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference for all purposes.
The following description relates to a radio frequency switching device capable of reducing leakage current.
In general, a radio frequency switching device may include a series switching circuit and a shunt switching circuit. Each of the series switching circuit and the shunt switching circuit may include a plurality of MOS transistors connected in series.
Gate voltages supplied to gates of the plurality of MOS transistors are used to control on-off switching. For example, in order to control the plurality of MOS transistors in an on state, a gate voltage higher than a turn-on voltage is supplied, and, in order to control the plurality of MOS transistors in an off state, a gate voltage lower than a turn-off voltage is supplied. For example, the gate voltage lower than the turn-off voltage may be a zero voltage, but in this case, there is a disadvantage in that isolation characteristics may deteriorate.
In order to overcome the disadvantage of the deterioration of the isolation characteristics, a radio frequency switching device including a negative circuit for generating a negative gate voltage has been proposed in order to improve the isolation characteristics by making a more definite off state.
權(quán)利要求
What is claimed is:1. A radio frequency switching device comprising:a first series switching circuit connected between a first terminal and a second terminal; a first shunt switching circuit connected between one end of the first series switching circuit and a ground; a voltage generation circuit configured to:generate a first gate voltage to be output to the first series switching circuit, generate a second gate voltage to be output to the first shunt switching circuit based on a battery voltage, and generate a bias voltage, which is higher than the second gate voltage, to control the first shunt switching circuit to enter an off state; a first resistance circuit connected between a signal line, which is connected between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and a ground terminal of the first shunt switching circuit, wherein the second resistance circuit is directly connected to the ground terminal. 2. The radio frequency switching device of claim 1 ,wherein the first resistance circuit comprises a first resistor connected between the bias voltage terminal of the voltage generation circuit and the signal line, and wherein the second resistance circuit includes a second resistor connected between the bias voltage terminal of the voltage generation circuit and the ground terminal. 3. The radio frequency switching device of claim 2 , wherein a first resistance value of the first resistance circuit is equal to a combined resistance value of the first shunt switching circuit in an off state and a resistance value of the second resistance circuit. 4. The radio frequency switching device of claim 1 , wherein the first series switching circuit comprises first to n-th MOS transistors connected in series between the first terminal and the second terminal, andwherein gates of the first to n-th MOS transistors are configured to receive the first gate voltage from the voltage generation circuit. 5. The radio frequency switching device of claim 1 , wherein the first shunt switching circuit comprises first to n-th MOS transistors connected in series between the one end of the first series switching circuit and the ground, andwherein gates of the first to n-th MOS transistors are configured to receive the second gate voltage from the voltage generation circuit. 6. The radio frequency switching device of claim 1 , wherein the voltage generation circuit is configured to:control an on state of the first series switching circuit and an off state of the first shunt switching circuit in a signal transfer mode, using the first gate voltage, the second gate voltage, and the bias voltage, and control an off state of the first series switching circuit and an on state of the first shunt switching circuit in a signal off mode, using the first gate voltage, the second gate voltage, and the bias voltage. 7. A radio frequency switching device comprising:a first series switching circuit connected between a first terminal and a second terminal; a first shunt switching circuit connected between one end of the first series switching circuit and a ground; a voltage generation circuit configured to:generate a first gate voltage to be output to the first series switching circuit, generate a second gate voltage to be output to the first shunt switching circuit based on a battery voltage, and generate a bias voltage, which is higher than the second gate voltage, to control the first shunt switching circuit to enter an off state; a first resistance circuit connected between a signal line, which is connected between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and a first capacitor circuit connected between a ground terminal of the first shunt switching circuit and the ground to block a direct current, wherein the bias voltage is transmitted to the ground terminal without passing through the first shunt switching circuit. 8. The radio frequency switching device of claim 7 , further comprising: a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and the ground terminal of the first shunt switching circuit. 9. The radio frequency switching device of claim 8 ,wherein the first resistance circuit comprises a first resistor connected between the bias voltage terminal of the voltage generation circuit and the signal line, and wherein the second resistance circuit comprises a second resistor connected between the bias voltage terminal of the voltage generation circuit and the ground terminal. 10. The radio frequency switching device of claim 9 , wherein a first resistance value of the first resistance circuit is equal to a combined resistance value of the first shunt switching circuit in an off state and a resistance value of the second resistance circuit. 11. The radio frequency switching device of claim 8 , wherein the first series switching circuit comprises first to n-th MOS transistors connected in series between the first terminal and the second terminal, andwherein gates of the first to n-th MOS transistors are configured to receive the first gate voltage from the voltage generation circuit. 12. The radio frequency switching device of claim 8 , wherein the first shunt switching circuit comprises first to n-th MOS transistors connected in series between the one end of the first series switching circuit and the ground, andwherein gates of the first to n-th MOS transistors are configured to receive the second gate voltage from the voltage generation circuit. 13. The radio frequency switching device of claim 8 , wherein the voltage generation circuit is configured to:control an on state of the first series switching circuit and an off state of the first shunt switching circuit in a signal transfer mode, using the first gate voltage, the second gate voltage, and the bias voltage, and control an off state of the first series switching circuit and an on state of the first shunt switching circuit in a signal off mode, using the first gate voltage, the second gate voltage, and the bias voltage. 14. The radio frequency switching device of claim 8 , wherein the first capacitor circuit comprises:a first capacitor connected between the ground terminal of the first shunt switching circuit and the ground and configured to block the direct current; and an Electro-Static Discharge (ESD) protection circuit connected in parallel to the first capacitor and configured to constantly maintain voltages of both ends of the first capacitor. 15. The radio frequency switching device of claim 8 , wherein the first resistance circuit comprises a first MOS transistor always in an off state to provide an off resistance, andwherein the first MOS transistor in the off state is configured to provide an Electro-Static Discharge (ESD) discharge path for protecting the first capacitor circuit from an ESD. 16. A radio frequency switching device comprising:a radio frequency switching circuit connected between a first terminal and a second terminal; and a voltage generation circuit configured to generate a first gate voltage, a second gate voltage, and a bias voltage, which is higher than the second gate voltage, for switching the first radio frequency switching circuit according to a band selection signal, wherein the voltage generation circuit comprises:a dynamic bias circuit configured to input a battery voltage and a reference voltage and to output the bias voltage and a buffer voltage; and a switch control circuit configured to input the voltage buffer and to output the first gate voltage and the second gate voltage. 17. The radio frequency switching device according to claim 16 , wherein the switch control circuit comprises:a level shifter configured to shift a voltage level of the band selection signal using the battery voltage and the buffer voltage; and a buffer circuit configured to generate the first gate voltage and the second gate voltage according to the level-shifter band selection signal. 18. The radio frequency switching device according to claim 16 , further comprising:a resistance circuit connected between a bias output terminal of the voltage generation circuit and the radio frequency switching circuit; and a capacitor circuit connected between the radio frequency switching circuit and a ground. 19. The radio frequency switching device according to claim 18 , wherein the capacitor circuit comprises a constant voltage device and a capacitor connected in parallel. 20. A radio frequency switching device comprising:a radio frequency switching circuit connected between a first terminal and a second terminal; a voltage generation circuit configured to generate a first gate voltage, a second gate voltage, and a bias voltage, which is higher than the second gate voltage, for switching the first radio frequency switching circuit according to a band selection signal; a resistance circuit connected between a bias output terminal of the voltage generation circuit and the radio frequency switching circuit; and a capacitor circuit connected between the radio frequency switching circuit and a ground, wherein the capacitor circuit comprises a constant voltage device and a capacitor connected in parallel.
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