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Leakage current reduction type radio frequency switch device

專利號(hào)
US11177801B2
公開日期
2021-11-16
申請(qǐng)人
SAMSUNG ELECTRO-MECHANICS CO., LTD.(KR Suwon-si)
發(fā)明人
Byeong Hak Jo; Hyun Paek; Jeong Hoon Kim
IPC分類
H03K17/16; H02H9/04
技術(shù)領(lǐng)域
circuit,voltage,switching,shunt,sh1,first,bias,vbias,resistance,terminal
地域: Suwon-si

摘要

A radio frequency switching device includes: a first series switching circuit connected between a first terminal and a second terminal; a first shunt switching circuit connected between one end of the first series switching circuit and a ground; a voltage generation circuit configured to generate a first gate voltage to be output to the first series switching circuit, to generate a second gate voltage to be output to the first shunt switching circuit, and to generate a bias voltage higher than the second gate voltage to control the first shunt switching circuit to enter an off state; a first resistance circuit connected between a signal line between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and a ground terminal of the first shunt switching circuit.

說明書

For example, in order to control the first shunt switching circuit SH1 to the off state, the second gate voltage Vg2 may be 0V and the bias voltage Vbias may be 1.2V, and accordingly, with respect to the signal line, there is an effect of supplying a negative voltage to the gate, and thus the first shunt switching circuit SH1 may be in the more definite off state.

The second resistance circuit 300 may be connected between the bias voltage Vbias terminal of the voltage generation circuit 100 and a ground terminal TG of the first shunt switching circuit SH1 and may provide the bias voltage Vbias output from the voltage generation circuit 100 to the ground terminal TG.

For example, the first resistance circuit 200 may include a first resistor R20 connected between the bias voltage Vbias terminal of the voltage generation circuit 100 and the signal line SL. The second resistance circuit 300 may include a second resistor R30 connected between the bias voltage Vbias terminal of the voltage generation circuit 100 and the ground terminal TG.

For example, a first resistance value of the first resistance circuit 200 may be the same as a combined resistance of a resistance value of the first shunt switching circuit SH1 in the off state and a resistance value of the second resistance circuit 300.

權(quán)利要求

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