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Leakage current reduction type radio frequency switch device

專利號(hào)
US11177801B2
公開(kāi)日期
2021-11-16
申請(qǐng)人
SAMSUNG ELECTRO-MECHANICS CO., LTD.(KR Suwon-si)
發(fā)明人
Byeong Hak Jo; Hyun Paek; Jeong Hoon Kim
IPC分類
H03K17/16; H02H9/04
技術(shù)領(lǐng)域
circuit,voltage,switching,shunt,sh1,first,bias,vbias,resistance,terminal
地域: Suwon-si

摘要

A radio frequency switching device includes: a first series switching circuit connected between a first terminal and a second terminal; a first shunt switching circuit connected between one end of the first series switching circuit and a ground; a voltage generation circuit configured to generate a first gate voltage to be output to the first series switching circuit, to generate a second gate voltage to be output to the first shunt switching circuit, and to generate a bias voltage higher than the second gate voltage to control the first shunt switching circuit to enter an off state; a first resistance circuit connected between a signal line between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and a ground terminal of the first shunt switching circuit.

說(shuō)明書(shū)

Referring to FIGS. 1 to 5, the voltage generation circuit 100 may use the first gate voltage Vg1 (e.g., 2.4 V), the second gate voltage Vg2 (e.g., 0 V), and the bias voltage Vbias (e.g., 1.2 V) in a signal transfer mode to control an on state of the first series switching circuit SE1 and an off state of the first shunt switching circuit SH1.

The voltage generation circuit 100 may also use the first gate voltage Vg1 (e.g., 0 V), the second gate voltage Vg2 (e.g., 2.4 V) and the bias voltage Vbias (e.g., 1.2V) in the signal transfer mode to control an off state of the first series switching circuit SE1 and an on state of the first shunt switching circuit SH1.

FIG. 6 is a diagram of a first capacitor circuit according to an example.

Referring to FIG. 6, a first capacitor circuit 400 may include a first capacitor C 40 and an Electro-Static Discharge (ESD) protection circuit 410.

The first capacitor C40 may be connected between a ground terminal of the first shunt switching circuit SH1 and ground to block a direct current.

The ESD protection circuit 410 may be connected in parallel to the first capacitor C40 and may constantly maintain voltages of both ends of the first capacitor C40 so as to protect the first capacitor C40 from overvoltage such as ESD, etc.

For example, the ESD protection circuit 410 may include a constant voltage device such as a diode.

FIG. 7 is a diagram of a first resistance circuit according to an example.

權(quán)利要求

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