The voltage generation circuit 100 may generate and respectively supply gate voltages Vg1-1, Vg1-2 and Vgn-1, Vgn-2 to the first radio frequency switching circuit SW1 to the n-th radio frequency switching circuit SWn, and generate and respectively supply bias voltages Vbias1 to Vbiasn the first radio frequency switching circuit SW1 to the n-th radio frequency switching circuit SWn through first and second resistance circuits 200-1, 300-1 and 200-n, 300-n.

FIG. 10 is a second application example of a radio frequency switching device according to an example.

Referring to FIG. 10, the radio frequency switching device may include the first radio frequency switching circuit SW1 to the n-th radio frequency switching circuit SWn.

Each of the first radio frequency switching circuit SW1 to the n-th radio frequency switching circuit SWn may include the series switches SE1 to SEn and the shunt switches SH1 to SHn.

The voltage generation circuit 100 may generate and respectively supply the gate voltages Vg1-1, Vg1-2 and Vgn-1, Vgn-2 to the first radio frequency switching circuit SW1 to the n-th radio frequency switching circuit SWn, and generate and respectively supply the bias voltages Vbias1 to Vbiasn the first radio frequency switching circuit SW1 to the n-th radio frequency switching circuit SWn through the first resistance circuits 200-1 to 200-n.

The radio frequency switching device may include first to n-th capacitor circuits 400-1 to 400-n.