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Leakage current reduction type radio frequency switch device

專利號
US11177801B2
公開日期
2021-11-16
申請人
SAMSUNG ELECTRO-MECHANICS CO., LTD.（KR Suwon-si）
發(fā)明人
Byeong Hak Jo; Hyun Paek; Jeong Hoon Kim
IPC分類
H03K17/16; H02H9/04
技術(shù)領(lǐng)域
circuit,voltage,switching,shunt,sh1,first,bias,vbias,resistance,terminal
地域： Suwon-si

摘要

A radio frequency switching device includes: a first series switching circuit connected between a first terminal and a second terminal; a first shunt switching circuit connected between one end of the first series switching circuit and a ground; a voltage generation circuit configured to generate a first gate voltage to be output to the first series switching circuit, to generate a second gate voltage to be output to the first shunt switching circuit, and to generate a bias voltage higher than the second gate voltage to control the first shunt switching circuit to enter an off state; a first resistance circuit connected between a signal line between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and a ground terminal of the first shunt switching circuit.

說明書

The switch control circuit may include a level shifter to shift a voltage level of the band selection signal using the battery voltage and the buffer voltage; and a buffer circuit to generate the first gate voltage and the second gate voltage according to the level-shifter band selection signal.

The radio frequency switching device may include a resistance circuit connected between a bias output terminal of the voltage generation circuit and the radio frequency switching circuit; and a capacitor circuit connected between the radio frequency switching circuit and a ground.

The capacitor circuit may include a constant voltage device and a capacitor connected in parallel.

Other features and aspects will be apparent from the following detailed description, the drawings, and the claims.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram of a radio frequency switching device according to an example.

FIG. 2 is a diagram of a radio frequency switching device according to an example.

FIG. 3 is a diagram of a radio frequency switching device according to an example.

FIG. 4 is a diagram of a radio frequency switching device according to an example.

FIG. 5 is a diagram of a first series switching circuit and a first shunt switching circuit according to an example.

FIG. 6 is a diagram of a first capacitor circuit according to an example.

權(quán)利要求

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