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Heat treatment apparatus

專利號(hào)
US11234296B2
公開(kāi)日期
2022-01-25
申請(qǐng)人
Tokyo Electron Limited(JP Tokyo)
發(fā)明人
Masayoshi Masunaga; Yutaka Sasaki
IPC分類
H05B3/68; H05B1/02; H01L21/67
技術(shù)領(lǐng)域
heat,treatment,partitions,partition,in,container,btm,convection,apparatus,heater
地域: Tokyo

摘要

A heat treatment apparatus includes a processing container extended in a vertical direction; a heater provided around the processing container; a temperature sensor provided along a longitudinal direction of the processing container either in the processing container or in a space between the processing container and the heater; and a pair of first partitions provided in the space across a half line that extends from a central axis of the processing container and passes through the temperature sensor, and extending along the longitudinal direction of the processing container.

說(shuō)明書(shū)

In Example 2, evaluation is made on temperature fluctuation when a second heat treatment accompanied by a change in temperature is repeatedly performed by 20 runs. The heat treatment apparatuses used in Example 2 include a heat treatment apparatus which does not have the first partitions 70 and 72 and the second partition 80, a heat treatment apparatus which has the first partitions 70 and 72, and a heat treatment apparatus which has the first partitions 70 and 72 and the second partition 80.

FIG. 13 is a view illustrating a change over time in a set temperature of the second heat treatment accompanied by a change in temperature. In FIG. 13, time is illustrated on the horizontal axis, and temperature [□] is illustrated on the vertical axis. As illustrated in FIG. 13, in Example 2, the set temperature in the carry-in step in which the wafer W is carried into the processing container 4 is set to 400□. Further, the set temperature in the first film-forming step in which the film-forming is performed on the wafer W is set to 500□. Further, the set temperature in the second film-forming step in which the film-forming is performed on the wafer W is set to 630□. Further, the set temperature in the carry-out step in which the wafer W is carried out from the processing container 4 is set to 400□.

權(quán)利要求

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