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Apparatus with a substrate provided with plasma treatment

專利號(hào)
US11291122B2
公開(kāi)日期
2022-03-29
申請(qǐng)人
Intel Corporation(US CA Santa Clara)
發(fā)明人
Darko Grujicic; Rengarajan Shanmugam; Sandeep Gaan; Adrian Bayraktaroglu; Roy Dittler; Ke Liu; Suddhasattwa Nad; Marcel A. Wall; Rahul N. Manepalli; Ravindra V. Tanikella
IPC分類
C23C18/38; H05K3/38; C23C18/16; C23C18/18; H01L21/48; H05K3/42; H05K3/46; H05K1/11; H01L23/14
技術(shù)領(lǐng)域
may,substrate,in,plating,metal,copper,surface,die,or,catalyst
地域: CA CA Santa Clara

摘要

Embodiments of the present disclosure describe techniques for providing an apparatus with a substrate provided with plasma treatment. In some instances, the apparatus may include a substrate with a surface that comprises a metal layer to provide signal routing in the apparatus. The metal layer may be provided in response to a plasma treatment of the surface with a functional group containing a gas (e.g., nitrogen-based gas), to provide absorption of a transition metal catalyst into the surface, and subsequent electroless plating of the surface with a metal. The transition metal catalyst is to enhance electroless plating of the surface with the metal. Other embodiments may be described and/or claimed.

說(shuō)明書

Higher initial number of copper nucleation sites on a substrate surface may have substantial benefits. For example, in the process of copper deposition, copper nuclei may start growing initially from the palladium sites in all directions (3D growth). As deposition progresses, individual nuclei may coalesce into a continuous film, and the film may continue growing uniformly into the 2D growth phase. The uniformity of the electroless copper film may be related to the initiation phase that depends on factors described before including favorable catalytic sites for initial seeding. Typically, higher number of palladium sites may provide for faster coalescence of copper nuclei in the initiation phase and subsequent transition from 3D to 2D growth, resulting in improved thickness uniformity of the resulting plated copper film.

權(quán)利要求

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