In summary, pre-treating the dielectric surface with nitrogenous gas based plasma may enhance the transition metal catalyst (e.g., Pd) seed coverage of the substrate surface, which in turn may increase the surface coverage with a metal layer to be used for signal routing in a semiconductor device. It should be noted that the plasma treatment process does not have an image by itself, and may manifest itself as an increased Pd seed coverage on the substrate surface, as illustrated by view 230 of FIG. 2. FIG. 5 illustrates an example computing device that may employ the apparatuses and/or methods described herein, according to various embodiments.

The motherboard 502 of the computing device 500 may include a number of components, including but not limited to a processor 504 and at least one communication chip 506. The processor 504 may be physically and electrically coupled to the motherboard 502. In some implementations, the communication chip 506 may also be physically and electrically coupled to the motherboard 502. In further implementations, the communication chip 505 may be part of the processor 504. In addition, the computing device 500 may further include an antenna 516.